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Synopsis

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials; All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework; Predictive capabilities of device models, discussed with systematic comparisons to experimental results

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